NPN EPITAXIAL PLANAR TRANSISTOR

Description The HBC548 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

NPN EPITAXIAL PLANAR TRANSISTOR

NPN Silicon Amplifier Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix

NPN Silicon Amplifier Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix

Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD548 is a low power, precision monolithic operational amplifier. It offers both low bias current (10 pA max, warmed up) and low quiescent current (200 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias current is guarantee

5 TO 500 MHz TO-8 CASCADABLE AMPLIFIER

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TO-8 CASCADABLE AMPLIFIER

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