Power MOSFETs and IGBT for PDP

Silicon N/P Channel Power MOS FET Power Switching

N-Channel and P-Channel MOSFET use advanced trench technology

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Power MOSFETs

N- and P-Channel 30 V (D-S) MOSFET

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Silicon N/P Channel Power MOS FET Power Switching

Silicon N/P Channel Power MOS FET Power Switching

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Silicon N/P Channel Power MOS FET Power Switching

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1 WATT ZENER DIODES

• 1N3016BUR-1 thru 1N3045BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/115 • 1 WATT ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

Infrared-Emitting Diode

Description: The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications. This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long lifetime. Features: • Low Cost • Low Degradation • New Mold Technology Impr

Infrared-Emitting Diode

Description: The NTE3029B is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. Features: • Good Optical to Mechanical Alignment • High Irradiance Level

Infrared-Emitting Diode

Description: The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications. This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long lifetime. Features: • Low Cost • Low Degradation • New Mold Technology Impr

360.0 MHz Differential Sine-Wave Clock

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