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HAT2189WP

Silicon N Channel Power MOS FET Power Switching

文件:56.01 Kbytes Page:4 Pages

RENESAS

瑞萨

HAT2189WP

Silicon N Channel Power MOS FET Power Switching

文件:210.26 Kbytes Page:7 Pages

RENESAS

瑞萨

HAT2189WP

Power MOSFETs

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

文件:210.26 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

文件:227.57 Kbytes Page:9 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

文件:56.01 Kbytes Page:4 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

文件:210.26 Kbytes Page:7 Pages

RENESAS

瑞萨

SRS A/V Focus SPEAKER ELEVATION AUDIO PROCESSOR

■ GENERAL DESCRIPTION The NJM2184/NJM2189 are Speaker Elevation Audio Processors based on the SRS FOCUS technology. They are capable of raising stereo image. In addition, the NJM2184/2189 include A/V FOCUS Filters to reduce harsh sound when the speakers are directly put on a hard-surface floor.

NJRC

日本无线

SRS A/V Focus SPEAKER ELEVATION AUDIO PROCESSOR

■ GENERAL DESCRIPTION The NJM2184/NJM2189 are Speaker Elevation Audio Processors based on the SRS FOCUS technology. They are capable of raising stereo image. In addition, the NJM2184/2189 include A/V FOCUS Filters to reduce harsh sound when the speakers are directly put on a hard-surface floor.

NJRC

日本无线

SRS A/V Focus SPEAKER ELEVATION AUDIO PROCESSOR

■ GENERAL DESCRIPTION The NJM2184/NJM2189 are Speaker Elevation Audio Processors based on the SRS FOCUS technology. They are capable of raising stereo image. In addition, the NJM2184/2189 include A/V FOCUS Filters to reduce harsh sound when the speakers are directly put on a hard-surface floor.

NJRC

日本无线

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2189 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

RFMD

威讯联合

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2189 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

RFMD

威讯联合

HAT2189WP产品属性

  • 类型

    描述

  • 封装类型:

    WPAK

  • Nch/Pch:

    Nch

  • 通道数:

    Single

  • VDSS (V) 最大值:

    200

  • ID (A):

    8.5

  • RDS (ON)(mΩ) 最大值@10V或8V:

    270

  • Ciss (pF) 典型值:

    430

  • Vgs (off) (V) 最大值:

    4.5

  • VGSS (V):

    30

  • Pch (W):

    20

  • 应用:

    Industrial

  • 安装类型:

    Surface Mount

  • 订购条件:

    Large order only

  • QG (nC) 典型值:

    10

更新时间:2026-8-4 20:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MINI
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
MINI
25+
N/A
20000
原装
MINI-CIRCUITS
2545+
SMD
4560
只做原装正品假一赔十为客户做到零风险!!
MINI
23+
N/A
10000
原装现货 假一赔十
MINI
24+
SMD
3600
MINI专营品牌全新原装正品假一赔十
LEM
25+23+
Sensors
35256
绝对原装正品全新进口深圳现货
MINI
22+
NA
5000
只做原装,价格优惠,长期供货。
Mini-Circuits
2023+
FF747
50
专业销售MINI电子元件,常年备有大量库存
RENESAS
23+
WPAK
5000
原装正品,假一罚十
RENESAS/瑞萨
24+
WPAK
9600
原装现货,优势供应,支持实单!

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