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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HAT2172N | Silicon N Channel Power MOS FET Power Switching 文件：81.75 Kbytes Page：8 Pages | RENESAS 瑞萨 |   | |
HAT2172N | Silicon N Channel Power MOS FET Power Switching | RENESAS 瑞萨 | | |
Silicon N Channel Power MOS FET Power Switching 文件：81.75 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
DSP Microcomputer GENERAL DESCRIPTION The ADSP-2171, ADSP-2172, and ADSP-2173 are single-chip microcomputers optimized for digital signal processing (DSP) and other high-speed numeric processing applications. The ADSP-2171 and ADSP-2172 are designed for 5.0 V applications. The ADSP-2173 is designed for 3.3 V appli | AD 亚德诺 | | ||
Bit Error Rate Tester BERT DESCRIPTION The DS2172 Bit Error Rate Tester (BERT) is a software programmable test pattern generator, receiver, and analyzer capable of meeting the most stringent error performance requirements of digital transmission facilities. Two categories of test pattern generation (Pseudo-random and Repet | DALLAS | | ||
ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a | RFMD 威讯联合 | | ||
ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a | RFMD 威讯联合 | | ||
ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a | RFMD 威讯联合 | |
HAT2172N产品属性
- 类型
描述
- 型号
HAT2172N
- 功能描述
MOSFET N-CH 40V 30A LFPAK-I
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
8619 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS |
10+ |
SOP8 |
20000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
24+ |
SOP-8 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
24+ |
SOP8 |
5000 |
全新原装正品,现货销售 |
|||
RENESAS |
24+ |
SOP8 |
8000 |
新到现货，只做全新原装正品 |
|||
RENESAS |
25+23+ |
NA |
20304 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS |
25+ |
2500 |
原厂原装,价格优势 |
||||
RENESAS/瑞萨 |
23+ |
8-LFPAK-IV |
6000 |
专注配单,只做原装进口现货 |
|||
RENESAS |
25+ |
SOP8 |
8800 |
公司只做原装,详情请咨询 |
HAT2172N芯片相关品牌
HAT2172N规格书下载地址
HAT2172N参数引脚图相关
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产品属性 属性值 搜索类似 制造商: Renesas Electronics 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: SMD/SMT 封装 / 箱体: LFPAK-5 封装: Cut Tape 封装: MouseReel 封装: Reel 商标: Renesas Electronics 产品类型: MOSFET 工厂包装数量: 2500 子类别: MOSFETs 单位重量: 80 mg
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2019-3-7
DdatasheetPDF页码索引
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