| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HAT2172H | Silicon N Channel Power MOS FET Power Switching 文件：102.29 Kbytes Page：10 Pages | RENESAS 瑞萨 |   | |
HAT2172H | Silicon N Channel Power MOS FET Power Switching 文件：89.32 Kbytes Page：8 Pages | RENESAS 瑞萨 | | |
HAT2172H | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon N Channel Power MOS FET Power Switching 文件：89.32 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel Power MOS FET Power Switching 文件：108.81 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel Power MOS FET Power Switching 文件：89.32 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
DSP Microcomputer GENERAL DESCRIPTION The ADSP-2171, ADSP-2172, and ADSP-2173 are single-chip microcomputers optimized for digital signal processing (DSP) and other high-speed numeric processing applications. The ADSP-2171 and ADSP-2172 are designed for 5.0 V applications. The ADSP-2173 is designed for 3.3 V appli | AD 亚德诺 | | ||
Bit Error Rate Tester BERT DESCRIPTION The DS2172 Bit Error Rate Tester (BERT) is a software programmable test pattern generator, receiver, and analyzer capable of meeting the most stringent error performance requirements of digital transmission facilities. Two categories of test pattern generation (Pseudo-random and Repet | DALLAS | | ||
ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a | RFMD 威讯联合 | | ||
ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a | RFMD 威讯联合 | | ||
ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a | RFMD 威讯联合 | |
HAT2172H产品属性
- 类型
描述
- 封装类型：
LFPAK
- Nch/Pch：
Nch
- 通道数：
Single
- VDSS (V) 最大值：
40
- ID (A)：
30
- RDS (ON)(mΩ) 最大值@10V或8V：
7.5
- Ciss (pF) 典型值：
2420
- Vgs (off) (V) 最大值：
3
- VGSS (V)：
20
- Pch (W)：
20
- 应用：
Industrial
- 安装类型：
Surface Mount
- 订购条件：
Large order only
- QG (nC) 典型值：
32
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
25+23+ |
SOT669 |
72813 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS |
22+ |
SOP |
8000 |
原装正品支持实单 |
|||
HITACHI |
26+ |
Sot-153 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS |
22+ |
LFPAK4 |
20000 |
公司只做原装 品质保障 |
|||
RENESAS |
0914+ |
LFPAK4 |
104 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
24+ |
LFPAK4 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
2023+ |
LFPAK4 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
RENESAS |
2511 |
LFPAK4 |
104 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
HAT2172H规格书下载地址
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产品属性 属性值 搜索类似 制造商: Renesas Electronics 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: SMD/SMT 封装 / 箱体: LFPAK-5 封装: Cut Tape 封装: MouseReel 封装: Reel 商标: Renesas Electronics 产品类型: MOSFET 工厂包装数量: 2500 子类别: MOSFETs 单位重量: 80 mg
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2019-3-7
DdatasheetPDF页码索引
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