Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V)

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V)

Silicon N Channel Power MOS FET Power Switching

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T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

4096 x 4 STATIC R/W RANDOM-ACCESS MEMORY

4096 x 4 Static R/W Random-Access Memory

T-1 1/2 Wedge Base

T-1 1/2 Wedge Base T-1 3/4 Wire Terminal

Wedge Base

T-1 1/2 Wedge Base T-1 3/4 Wire Terminal T-1 3/4 Wire Terminal (standard)

Porting an application from the ST10F168 to the ST10F276

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