Silicon N Channel MOS FET High Speed Power Switching

文件：61.19 Kbytes Page：4 Pages

Transistors>Switching/MOSFETs

Silicon N Channel MOS FET High Speed Power Switching

文件：61.19 Kbytes Page：4 Pages

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

Integrated Circuit 7-Stage Driver Array

Features: • Low Output Saturation Voltage • Protective Diodes Guard Against Negative Inputs • Spark Killer Diodes Accommodate L–Loads • Eqipped with a Strobe Terminal to Cut Off Outputs • With 7 Units, it is Ideal for 14–Digit Printers Applications: • Driving Battery–Operate

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR20100CT series is supplied in the SOT78

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For