Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Nch Dual Power Mosfet 100V 1A 0.75Mohm Tssop8

The HAT2050T is a Nch Dual Power Mosfet 100V 1A 0.75Mohm Tssop8.

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Power switching MOSFET

CCD Monochrome Video Camera Signal Processor IC

■ Features • Frequency characteristics:10MHz (icompatible with the CCD image element of 330,000 pixels) • AGC range:18dB (improved SN ratio) • Operating supply voltage range:4.5V to 5.3V (typ. 5V) • Power consumption:typ. 225mW

Integrated Circuit 31/2-Digit Single Chip A/D Converter

Description: The NTE2050 and NTE2051 are high performance, low power 3–1/2 digit A/D converters containing all the necessary active devices on a single CMOS IC. Included are seven segment decoders, display drivers, reference and a clock. The NTE2051 is designed to interface with a liquid crystal

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

32W Hi-Fi AUDIO POWER AMPLIFIER

DESCRIPTION The TDA 2050 is a monolithic integrated circuit in Pentawatt package, intended for use as an audio class AB audio amplifier. Thanks to its high power capability the TDA2050 is able to provide up to 35W true rms power into 4 ohm load @ THD = 10, VS = ±18V, f = 1KHz and up to 32W into 8