Silicon N Channel Power MOS FET Power Switching

Features • Capable of 2.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6.5 mΩ typ (at VGS = 4.5V)

Silicon N Channel Power MOS FET Power Switching

Features • Capable of 2.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6.5 mΩ typ (at VGS = 4.5V)

Power MOSFETs

Silicon N Channel Power MOS FET Power Switching

Features • Capable of 2.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6.5 mΩ typ (at VGS = 4.5V)

Silicon N Channel Power MOS FET Power Switching

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UHF power transistor

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT437A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output match

Digital Comb Filter (NTSC/PAL/PAL-M/PAL-N)

Description The CXD2044Q is an adaptive intra-field comb filter compatible with NTSC, PAL, PAL-M and PAL-N systems, and can provide high-precision Y/C separation with a single chip. Features • Intra-field Y/C separation by adaptive processing • 8-bit A/D converter (1-channel) • 8-bit D/A conv

GENERAL PURPOSE AMPLIFIER

Product Description The RF2044 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

Low Power/Low Voltage 120MHz Unity-Gain Stable Operational Amplifier

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QUAD POWER-DISTRIBUTION SWITCHES

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