Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Power MOSFETs

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

EU Power Cord with IEC Appliance Connector C19, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

PHENOLIC INSTRUMENT CASES

[KEYSTONE] PHENOLIC INSTRUMENT CASES •Choice of Sizes •Sturdy construction •Flush mounting panels •Cases and panels are sold separately •Covers available in Phenolic or Aluminum •Covers can be machined to accept dials, switches, displays •Panel mounting screws available

LED BACKLIGHT FOR LCD DISPLAY

LED BACKLIGHT FOR LCD DISPLAY

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

Snap Bushings

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