| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HAT2020R | Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting | RENESAS 瑞萨 | ||
HAT2020R | Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting | HITACHIHitachi Semiconductor 日立日立公司 | ||
HAT2020R | Power MOSFETs | RENESAS 瑞萨 | ||
Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting | RENESAS 瑞萨 | |||
Silicon N Channel Power MOS FET High Speed Power Switching 文件:108.95 Kbytes Page:9 Pages | RENESAS 瑞萨 | |||
Dual Balanced Modulator IC ■ Overview The AN2020S is an integrated circuit which incorporates two balanced modulators. It can be used for a video-frequency-band dual amplifier, variable gain amplifier, balanced modulator, demodulator, etc. ■ Features • Low voltage operation:4.8V(typ.) • Carrier suppression:–43dB(typ.) | PANASONIC 松下 | |||
Integrated Circuit 8-Channel Darlington Array/Driver Description: Ideally suited for interfacing between low–level digital logic circuitry and high–power peripheral loads, the NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in an 18–Lead DIP type package and feature peak load current ratings to 600mA (NTE2016, NTE2019) or | NTE | |||
SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere) FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For | PANJIT 強茂 | |||
ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere) FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For | PANJIT 強茂 | |||
POWER RECTIFIERS(20A,50-200V) Switchmode Full Plastic Dual Ultrafast Power Rectifiers ... Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction | MOSPEC 统懋 |
HAT2020R产品属性
- 类型
描述
- 封装类型:
SOP8
- Nch/Pch:
Nch
- 通道数:
Single
- VDSS (V) 最大值:
30
- ID (A):
8
- RDS (ON)(mΩ) 最大值@4V或4.5V:
50
- RDS (ON)(mΩ) 最大值@10V或8V:
28
- Ciss (pF) 典型值:
780
- Vgs (off) (V) 最大值:
2
- VGSS (V):
20
- Pch (W):
2.5
- 应用:
Industrial
- 安装类型:
Surface Mount
- 订购条件:
Large order only
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
R |
23+ |
SOP-8 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
RENESAS/瑞萨 |
25+ |
SOP-8 |
35388 |
RENESAS/瑞萨全新特价HAT2020R-EL-E即刻询购立享优惠#长期有货 |
|||
RENESAS/瑞萨 |
新年份 |
SOP-8 |
33288 |
原装正品现货,实单带TP来谈! |
|||
RENESAS-PBFR |
24+ |
SOP8 |
3200 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
RENESAS |
23+ |
SOP8 |
65480 |
||||
HITACHI |
2450+ |
SOP-8 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HITACHI |
25+ |
SOP8 |
1245 |
强调现货,随时查询! |
|||
RENESAS/瑞萨 |
2025+ |
SOP-8 |
5000 |
原装进口价格优 请找坤融电子! |
|||
RENESAS/瑞萨 |
24+ |
SOP8 |
9600 |
原装现货,优势供应,支持实单! |
|||
RENESAS/瑞萨 |
23+ |
SOP-8 |
3470 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
HAT2020R芯片相关品牌
HAT2020R规格书下载地址
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