Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon N Channel Power MOS FET High Speed Power Switching

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HIGH VOLTAGE CAPACITORS MONOLITHIC CERAMIC TYPE

FIXED SIP DELAY LINE TR 1ns

FUNCTIONAL DESCRIPTION The 2020- and 2021-series devices are fixed, single-input, single-output, passive delay lines. The signal input (IN) is reproduced at the output (OUT), shifted by a time (TD) given by the device dash number. The characteristic impedance of the lines is nominally 50 ohms. Th

Directional Couplers Mini, Octave Bandwidth

Description These miniature couplers are designed to provide sampling of the RF Power propagating in one direction on a transmission line. Features • Smallest and Lightest Couplers Available • 0.5 through 18 GHz, including Wideband Units • High Directivity - Low VSWR • Meets MIL-E-5400 Envir

Directional Couplers Mini, Octave Brandwidth

Aluminum Electrolytic Capacitors

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