Silicon P Channel Power MOS FET Power Switching

Features • Low on-resistance • Low drive current • High density mounting • 4.5V gate drive device can be driven from 5V source

Silicon P Channel Power MOS FET Power Switching

Features • Low on-resistance • Low drive current • High density mounting • 4.5 V gate drive device can be driven from 5 V source

Silicon P Channel Power MOS FET Power Switching

Features • Low on-resistance • Low drive current • High density mounting • 4.5 V gate drive device can be driven from 5 V source

Inst, 20 Pr #16 Str BC, PVC-NYL Ins E1, IS/OS, Blk PVC Jkt, 600V TC-ER 150V NPLF 90C Dry 75C Wet

Product Description UL Instrumentation, 20 Pair 16AWG (7x24) Bare Copper, PVC-NYL Insulation E1 Color Code, Individual & Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF 90C Dry 75C Wet SUN RES DIR BUR

짹70V Fault Protected High-Speed CAN Transceiver with IEC 61000-4-2 contact 짹15kV ESD Protection

Features  Fully ISO 11898-2:2016 and SAE J2284-1 to SAE J2284-5 compliant for 2Mbps and 5Mbps CAN FD with basic wake-up implementation  Fault voltage up to ±70V for bus pins, suitable for 12V, 24V and 36V systems  Integrated ESD and Surge Transient Voltage Suppressor (TVS) for bus pins

짹70V Fault Protected High-Speed CAN Transceiver with IEC 61000-4-2 contact 짹15kV ESD Protection

Features  Fully ISO 11898-2:2016 and SAE J2284-1 to SAE J2284-5 compliant for 2Mbps and 5Mbps CAN FD with basic wake-up implementation  Fault voltage up to ±70V for bus pins, suitable for 12V, 24V and 36V systems  Integrated ESD and Surge Transient Voltage Suppressor (TVS) for bus pins

Desoldering Tool

Instruction Manual  Thank you for purchasing the HAKKO 475 desoldering tool. Please read this manual before operating the HAKKO 475. Keep this manual readily accessible for reference.

RF AMPLIFIER

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