Silicon N Channel Power MOSFET Power Switching

Descriptions This FET has the over temperature shutdown capability sensing the junction temperature.This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power

Silicon N Channel MOS FET Series Power Switching

Descriptions\nThis FET has the over temperature shutdown capability sensing the junction temperature.This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power con •  Logic level operation (4 to 6 V Gate drive)\n•  Built-in the over temperature shutdown circuit\n•  Latch type shutdown operation (Need 0 voltage recovery);

Silicon N Channel Power MOSFET Power Switching

Descriptions This FET has the over temperature shutdown capability sensing the junction temperature.This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power

Silicon N Channel Power MOSFET Power Switching

Descriptions This FET has the over temperature shutdown capability sensing the junction temperature.This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power

Silicon N Channel Power MOSFET Power Switching

Descriptions This FET has the over temperature shutdown capability sensing the junction temperature.This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power

Silicon N Channel Power MOSFET Power Switching

Descriptions This FET has the over temperature shutdown capability sensing the junction temperature.This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power

Silicon N Channel Power MOS FET Power Switching

This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, ove • Logic level operation (4 to 6 V Gate drive)\n• High endurance capability against to the short circuit\n• Built-in the over temperature shutdown circuit\n• Latch type shutdown operation (Need 0 voltage recovery);

Silicon N Channel Power MOS FET Power Switching

This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, ove • Logic level operation (4 to 6 V Gate drive)\n• High endurance capability against to the short circuit\n• Built-in the over temperature shutdown circuit\n• Latch type shutdown operation (Need 0 voltage recovery);

Silicon N Channel Power MOS FET Power Switching

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GENERAL DESCRIPTION The SSM2017 is a latest generation audio preamplifier, combin ing SSM preamplifier design expertise with advanced process ing. The result is excellent audio performance from a self contained 8-pin mini-DIP device, requiring only one external gain set resistor or potentiom

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GENERAL DESCRIPTION The SSM2017 is a latest generation audio preamplifier, combin ing SSM preamplifier design expertise with advanced process ing. The result is excellent audio performance from a self contained 8-pin mini-DIP device, requiring only one external gain set resistor or potentiom