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型号 功能描述 生产厂家 企业 LOGO 操作
HAF2005

Silicon N Channel MOS FET Series Power Switching

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt

HITACHIHitachi Semiconductor

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HAF2005

Silicon N Channel MOSFET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

RENESAS

瑞萨

HAF2005

Silicon N Channel MOS FET Series Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio • Logic level operation (4 to 6 V Gate drive)\n• Built-in the over temperature shut-down circuit\n• Latch type shut-down operation (Need 0 voltage recovery)\n;

RENESAS

瑞萨

Silicon N Channel MOS FET Series Power Switching

文件:107.84 Kbytes Page:10 Pages

RENESAS

瑞萨

256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2004 and MPC2005 are designed to provide burstable, high performance 256KB/512KB L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. The modules are configured

MOTOROLA

摩托罗拉

POWER RECTIFIERS(20A,50-200V)

Switchmode Full Plastic Dual Ultrafast Power Rectifiers Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction

MOSPEC

统懋

LM2005 20 Watt Automotive Power Amplifier

文件:205.68 Kbytes Page:8 Pages

NSC

国半

LM2005 20 Watt Automotive Power Amplifier

文件:205.68 Kbytes Page:8 Pages

NSC

国半

LM2005 20 Watt Automotive Power Amplifier

文件:205.68 Kbytes Page:8 Pages

NSC

国半

HAF2005产品属性

  • 类型

    描述

  • 型号

    HAF2005

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    Silicon N Channel MOS FET Series Power Switching

更新时间:2026-8-1 19:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
14+
TO-220
919
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
RENESAS
14+
TO-220
923
全新 发货1-2天
RENESAS/瑞萨
25+
TO-220
20000
公司现货
R
23+
T0-220FP
8400
专注配单,只做原装进口现货
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS/瑞萨
2023+
TO-220
8800
正品渠道现货 终端可提供BOM表配单。
R
22+
T0-220FP
6000
十年配单,只做原装
RENESAS/瑞萨
25+
TO-220
28000
原装正品,可来电咨询
Renesas/瑞萨
14+
TO-220
519
全新、原装、深圳、现货

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