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型号 功能描述 生产厂家 企业 LOGO 操作
HAF2001

Silicon N Channel MOS FET Series Power Switching

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over pow

HITACHIHitachi Semiconductor

日立日立公司

HAF2001

Silicon N Channel MOSFET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

RENESAS

瑞萨

HAF2001

Intelligent Power Devices

RENESAS

瑞萨

Silicon N Channel MOSFET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

RENESAS

瑞萨

256KB Asynchronous Secondary Cache Module for PowerPC

The MPC2001 is designed to provide asynchronous 256KB L2 cache for the PowerPC 60x processors. The module is configured as 32K x 64 bits in a 136 pin dual readout single inline memory module (DIMM). The module uses eight of Motorola’s MCM6206 CMOS RAMs. Eight write enables are provided for byte w

MOTOROLA

摩托罗拉

900 MHz DOWNCONVERTER LNA/MIXER SILICON MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2001 is an integrated downconverter designed for receivers operating in the 800 MHz to 1.0 GHz frequency range. The design utilizes Motorola’s advanced MOSAIC 3 silicon bipolar RF process to yield superior performance in a cost effective monolithic device. Applications for the MRFIC2001 i

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

MOTOROLA

摩托罗拉

High Precision, 6MHz Rail-To-Rail Output Operational Amplifier

文件:430.08 Kbytes Page:11 Pages

NSC

国半

High Precision, 6MHz Rail-To-Rail Output Operational Amplifier

文件:430.08 Kbytes Page:11 Pages

NSC

国半

HAF2001产品属性

  • 类型

    描述

  • 型号

    HAF2001

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    Silicon N Channel MOS FET Series Power Switching

更新时间:2026-3-18 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
N/A
25+
TO-220F
9000
只做原装正品 有挂有货 假一赔十
R
23+
TO-220A
8560
受权代理!全新原装现货特价热卖!
-
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
RENESAS
23+
TO-251
71096
##公司主营品牌长期供应100%原装现货可含税提供技术
Renesas
23+
2013+
7300
专注配单,只做原装进口现货
RENESAS/瑞萨
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
N/A
23+
TO-220F
50000
全新原装正品现货,支持订货
RENESAS/瑞萨
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
VBsemi/台湾微碧
22+
T0-220FP
20000
公司只做原装 品质保障
HITACHI
24+
TO252
6980
原装现货,可开13%税票

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