Silicon N Channel MOSFET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

Silicon N Channel MOS FET Series Power Switching

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over pow

Intelligent Power Devices

Silicon N Channel MOSFET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

US Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

1.0 Watt - 28 Volts, Class C Microwave 2000 MHz

GENERAL DESCRIPTION The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

Snap Bushings

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7½-Digit High Performance Multimeter 8½-Digit High Performance Multimeter

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boxes and ancillary products

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