8.0 - 12.0 GHz High Power Amplifier

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8.0 - 12.0 GHz High Power Amplifier

文件：25.38 Kbytes Page：1 Pages

8.0 - 12.0 GHz High Power Amplifier

文件：25.2 Kbytes Page：1 Pages

8.0 - 12.0 GHz High Power Amplifier

文件：25.2 Kbytes Page：1 Pages

8.0 - 12.0 GHz High Power Amplifier

文件：25.2 Kbytes Page：1 Pages

8.0 - 12.0 GHz High Power Amplifier

文件：25.38 Kbytes Page：1 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-264 P

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

Fast Recovery Rectifier, 40A, 200ns

Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin

High-speed Data Converter

High-speed Data Converter

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free