丝印代码：H857；14 Gbps, 2 x 2 CROSSPOINT SWITCH WITH PROGRAMMABLE OUTPUT VOLTAGE

Features Supports High Data Rates: up to 14 Gbps Differential or Single-Ended Inputs / Outputs Fast Rise and Fall Times: 21 / 21 ps Low Power Consumption: 345 mW typ. Programmable Differential Output Voltage Swing: 475 - 1200 mVp-p Propagation Delay: 117 ps Single Supply: -3.3 V 32 Lead C

576 ohm, Thin Film, Precision Resistor, .1 %, .25 W, ±15 ppm/°C, Axial-Leaded, Copper Termination, 7.2 x 2.5 mm, Bandoliered, Holsworthy Holco

576 ohm, Thin Film, Precision Resistor, .1 %, .25 W, ±15 ppm/°C, Axial-Leaded, Copper Termination, 7.2 x 2.5 mm, Bandoliered, Holsworthy Holco

Heyco® Nylon Conduit Fittings - Straight-Thru

文件：144.65 Kbytes Page：1 Pages

Heyco® Nylon Conduit Fittings - Straight-Thru

文件：144.65 Kbytes Page：1 Pages

Heyco® Nylon Conduit Fittings - Straight-Thru

文件：144.65 Kbytes Page：1 Pages

Heyco® Nylon Conduit Fittings - Straight-Thru

文件：144.65 Kbytes Page：1 Pages

Heyco® Nylon Conduit Fittings - Straight-Thru

文件：144.65 Kbytes Page：1 Pages

Heyco® Nylon Conduit Fittings - Straight-Thru

文件：144.65 Kbytes Page：1 Pages

Heyco® Nylon Conduit Fittings - Straight-Thru

文件：144.65 Kbytes Page：1 Pages

Heyco® Nylon Conduit Fittings - Straight-Thru

文件：144.65 Kbytes Page：1 Pages

封装/外壳：轴向 包装：散装 描述：RES 576K OHM 0.1% 1/4W AXIAL 电阻器 通孔式电阻器

封装/外壳：轴向 包装：散装 描述：RES 576K OHM 0.1% 1/4W AXIAL 电阻器 通孔式电阻器

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of