封装/外壳：轴向 包装：散装 描述：RES 562K OHM 0.1% 1/4W AXIAL 电阻器 通孔式电阻器

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION The NX8562LB is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for transmission systems in which external modulators are used. FEATURES • Output power Pf = 20 mW MIN. • Wavelength selectable for ITU-T standards

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION The NX8562LB is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for transmission systems in which external modulators are used. FEATURES • Output power Pf = 20 mW MIN. • Wavelength selectable for ITU-T standards

4 x 12 W single-ended car radio power amplifier with dynamic distortion detector and diagnostic interface

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