| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：H80R；SN74AUP1G80 Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 | TI 德州仪器 |   | ||
丝印代码：H80R；SN74AUP1G80 Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 | TI 德州仪器 | | ||
丝印代码：H80R；SN74AUP1G80 Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 | TI 德州仪器 | | ||
丝印代码：H80R；SN74AUP1G80 Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 | TI 德州仪器 | | ||
丝印代码：H80R；SN74AUP1G80 Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 | TI 德州仪器 | | ||
丝印代码：H80R；SN74AUP1G80 Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop 1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 | TI 德州仪器 | | ||
丝印代码：H80R；LOW-POWER DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP 1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot | TI 德州仪器 | | ||
丝印代码：H80R；LOW-POWER DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP 1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot | TI 德州仪器 | | ||
丝印代码：H80R；LOW-POWER DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP 1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot | TI 德州仪器 | | ||
丝印代码：H80R；LOW-POWER DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP 1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot | TI 德州仪器 | | ||
丝印代码：H80R；LOW-POWER DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP 1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot | TI 德州仪器 | | ||
丝印代码：H80R；LOW-POWER DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP 1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot | TI 德州仪器 | | ||
丝印代码：H80R；LOW-POWER DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP 1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot | TI 德州仪器 | | ||
丝印代码：H80R；Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop 文件：1.76827 Mbytes Page：41 Pages | TI 德州仪器 | | ||
丝印代码：H80R；Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop 文件：1.76827 Mbytes Page：41 Pages | TI 德州仪器 | | ||
丝印代码：H80R；Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop 文件：1.76827 Mbytes Page：41 Pages | TI 德州仪器 | | ||
丝印代码：H80R；Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop 文件：1.76827 Mbytes Page：41 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
24+ |
VSSOP8 |
880000 |
明嘉莱只做原装正品现货 |
|||
TI/德州仪器 |
2450+ |
VSSOP8 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
TI/德州仪器 |
24+ |
VSSOP8 |
42000 |
只做原装进口现货 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
TI |
25+ |
VSSOP-8-0.5mm |
7786 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
24+ |
N/A |
74000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TI/德州仪器 |
26+ |
原厂封装 |
10280 |
||||
Texas Instruments |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
TI |
22+ |
8VFSOP |
9000 |
原厂渠道,现货配单 |
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