N-Channel Enhancement-Mode MOSFET (30V, 11A)

Features • RDS(on)=13.5mΩ@VGS=10V, ID=11A • RDS(on)=24mΩ@VGS=4.5V, ID=5A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance

Low Voltage MOSFET

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sou

JST PH 2.0mm Pitch Connector Kit - 220 Piece Kit

文件：469.04 Kbytes Page：2 Pages

N-Channel 20-V (D-S) MOSFET

文件：341.22 Kbytes Page：5 Pages