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丝印代码:H30R90;Reverse Conducting IGBT with monolithic body diode

Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat

INFINEON

英飞凌

H30R90

Reverse Conducting IGBT with monolithic body diode

Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat

INFINEON

英飞凌

更新时间:2026-3-18 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
23+
30A,900V
20000
全新原装假一赔十
INFINEON
12+
TO247
209
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
23+
TO-247-3
11111
原厂授权一级代理,专业海外优势订货,价格优势、品种
Infineon
24+
TO-247
6525
全新原装现货,欢迎询购!!
INFINEON/英飞凌
22+
TO-247
9000
专业配单,原装正品假一罚十,代理渠道价格优
INFINEON/英飞凌
19+
3P
50000
INFINEON
23+24
TO-247
49820
主营全系列二三极管、MOS场效应管、
INFINEON
25+23+
TO-247
34973
绝对原装正品全新进口深圳现货
Infineon(英飞凌)
23+
19850
原装正品,假一赔十
Infineon
原厂封装
9800
原装进口公司现货假一赔百

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