位置:首页 > IC中文资料 > H30N3FA

型号 功能描述 生产厂家 企业 LOGO 操作
H30N3FA

丝印代码:H30N3FA;30V Trench Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • Motor Control

HUIXIN

慧芯电子

30V Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

HUIXIN

慧芯电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant.

CET

华瑞

PACKAGE DIMENSIONS inch (mm)

文件:31.22 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

H30N3FA数据表相关新闻