N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.

N-Channel Enhancement Mode Field Effect Transistor

General Description These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and

场效应管

Low Voltage MOSFET

CASE 29-04, STYLE 22 TO-92 (TO-226AA)

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

N-CHANNEL-ENHANCEMENT

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