4 Gbit (512M x 8 bit) NAND Flash

Summary Description H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided i

4 Gbit (512M x 8 bit) NAND Flash

Summary Description H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided i

4 Gbit (512M x 8 bit) NAND Flash

Summary Description H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided i

4 Gbit (512M x 8 bit) NAND Flash

Summary Description H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided i

NAND Flash(SLC,MLC,eMMC,E2NAND3.0,(Solid State Drive))

文件：87.34 Kbytes Page：5 Pages