PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

DESCRIPTION The H21A1, H21A2 and H21A3 consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. T

1mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL SLOTTED INTERRUPTER SWITCHES WITH TRANSISTOR SENSORS

DESCRIPTION The H21A_ and H22A_ series of opaque photointerrupters are single channel switches consisting of a Gallium Arsenide infrared emitting diode and a NPN silicon photo transistor mounted in a polycarbonate housing. The package is designed to optimise the mechanical resolution, coupling e

封装/外壳：开槽，PC 引脚 包装：散装 描述：SENSOR OPT SLOT PHOTOTRAN PC PIN 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

封装/外壳：开槽，PC 引脚 包装：散装 描述：SENSOR OPT SLOT PHOTOTRAN PC PIN 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

SLOTTED OPTICAL SWITCH

文件：307.53 Kbytes Page：4 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 20 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

OUTDOOR LAMP CLUSTER

文件：319.03 Kbytes Page：3 Pages

20KB SOUND CONTROLLER

文件：290.78 Kbytes Page：14 Pages