丝印代码：H15N70AF；700V N-Channel Planar MOSFET

Features RDSON≤ 0.65 Ω @ Vgs=10 V, Id= 7.5A gate Charge(typical typical53 nC) Crss (typical typical3.1pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply ( Power Factor Correction(PFC) (PFC)

丝印代码：H15N70AP；700V N-Channel Planar MOSFET

Features RDSON≤ 0.65 Ω @ Vgs=10 V, Id= 7.5A gate Charge(typical typical53 nC) Crss (typical typical3.1pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply ( Power Factor Correction(PFC) (PFC)

N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET