H11D3价格
参考价格：￥3.3545
型号：H11D3 品牌：Vishay 备注：这里有H11D3多少钱，2026年最近7天走势，今日出价，今日竞价，H11D3批发/采购报价，H11D3行情走势销售排行榜，H11D3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H11D3 | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 |   | |
H11D3 | Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage FEATURES • Very high collector emitter breakdown voltage BVCEO = 300 V • Isolation test voltage: 5000 VRMS • Low coupling capacitance • High common mode transient immunity • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS • | VISHAYVishay Siliconix 威世威世科技公司 | | |
H11D3 | Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage DESCRIPTION The H11Dx has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coup | VISHAYVishay Siliconix 威世威世科技公司 | | |
H11D3 | HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT DESCRIPTION The H11D series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part | ISOCOM 英国安数光 | | |
H11D3 | Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage Very high collector emitter breakdown voltage BVCEO = 300 V\nIsolation test voltage: 5000 VRMS\nLow coupling capacitance; | VISHAYVishay Siliconix 威世威世科技公司 | | |
H11D3 | H11D3 Transistor Detector 6 Pin, Single | ISOCOM 英国安数光 | | |
H11D3 | Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage 文件：120.43 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage FEATURES • Very high collector emitter breakdown voltage BVCEO = 300 V • Isolation test voltage: 5000 VRMS • Low coupling capacitance • High common mode transient immunity • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS • | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
6-Pin DIP High Voltage Phototransistor Optocouplers Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea | ONSEMI 安森美半导体 | | ||
6 引脚 DIP 高压光电晶体管输出光耦合器 4N38M、H11D1M、H11D3M 和 MOC8204M 都是耦合至光隔离器的光电晶体管类型。 一个砷化镓红外发光二极管与一个高压NPN硅光电二极管耦合。 该器件提供标准塑封6引脚双列直插封装。 • 高电压：\n• MOC8204M, BVCEO= 400 V\n• H11D1M, BVCEO= 300 V\n• H11D3M, BVCEO= 200 V\n• 安全和法规认证：\n• UL1577，4170 VACRMS（1 分钟）\n• DIN-EN/IEC60747-5-5，850 V 峰值工作绝缘电压; | ONSEMI 安森美半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT DESCRIPTION The H11D series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part | ISOCOM 英国安数光 | | ||
Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage 文件：120.43 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
H11D3产品属性
- 类型
描述
- VRWM(V)：
12
- PD(W)：
350
- IPP (A) ：
11
- VC (V)：
32
- Uni/Bi：
Bi
- Cap(pF)：
75
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
A |
24+ |
DIP-6 |
268 |
||||
onsemi(安森美) |
25+ |
SMD-6P |
31277 |
正规渠道,大量现货,只等你来。 |
|||
QTC |
DIP |
256 |
正品原装--自家现货-实单可谈 |
||||
ONSEMI/安森美 |
2025+ |
5000 |
原装进口价格优 请找坤融电子! |
||||
ISOCOM/英国安数光 |
24+ |
DIP6 |
22055 |
郑重承诺只做原装进口现货 |
|||
FSC |
20+ |
SOP-6 |
2960 |
诚信交易大量库存现货 |
|||
FATRCHILD |
22+ |
DIP-6 |
7311 |
进口原装!现货库存 |
|||
FAIRCILD |
22+ |
DIP-6 |
8000 |
原装正品支持实单 |
|||
26+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
FAIRCHILD/仙童 |
23+ |
SOP-6 |
3306 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
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