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位置：首页 > IC中文资料 > H11B3

型号 功能描述 生产厂家 企业 LOGO 操作
H11B3

PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. FEATURES • High sensitivity to low input drive current • Meets or exceeds all JEDEC Registered Specifications • VDE 0884 approval avail

FAIRCHILD

仙童半导体

H11B3

PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. FEATURES • High sensitivity to low input drive current • Meets or exceeds all JEDEC Registered Specifications • VDE 0884 approval avail

FAIRCHILD

仙童半导体

H11B3

Optocoupler, Photodarlington Output, High Gain, With Base Connection

DESCRIPTION The H11B1, H11B2, H11B3 are industry standard optocouplers, consisting of a gallium arsenide infrared LED and a silicon photodarlington. FEATURES • Isolation test voltage: 4420 VRMS • Coupling capacitance, 0.5 pF • Material categorization:    for definitions of compliance please

VISHAYVishay Siliconix

威世威世科技公司

H11B3

6 PIN DIP PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3

OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT

DESCRIPTION The H11B_ series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES ● Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no.

ISOCOM

英国安数光

H11B3

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

MCC

H11B3

6-Pin DIP Optoisolators Darlington Output(Low Input Current)

The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high output current (IC) at low LED input currents (IF). • High Sensitivity to Low Input Drive

MOTOROLA

摩托罗拉

H11B3

6-PIN PHOTODARLINGTON OPTOCOUPLER

文件：473.93 Kbytes Page：12 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

H11B3

PHOTODARLINGTON OPTOCOUPLERS

文件：140.38 Kbytes Page：7 Pages

QT

H11B3

Optocoupler, Photodarlington Output, High Gain, with Base Connection

文件：116.14 Kbytes Page：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

H11B3

6 PIN PHOTODARLINGTON

文件：331.7 Kbytes Page：13 Pages

EVERLIGHT

台湾亿光

H11B3

光耦合器-Darlington Transistor

LIGHTNING

亮牛半导体

H11B3

Photo Coupler : Darlington

CTMICRO

H11B3

Photo Darlington

EVERLIGHT

台湾亿光

H11B3MT1

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3MT1-G

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3MT2

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3MT2-G

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3MTA-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3MTB-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3M-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3S1TA-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3S1TB-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3S1-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3SLT1

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3SLT1-G

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3SLT2

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3SLT2-G

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3ST1

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3ST1-G

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3ST2

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3ST2-G

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

CTMICRO

H11B3STA-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3STB-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3S-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3TA-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3TB-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3-V

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

EVERLIGHT

台湾亿光

H11B3X

OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT

DESCRIPTION The H11B_ series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES ● Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no.

ISOCOM

英国安数光

H11B33SD

封装/外壳：6-SMD，鸥翼 包装：卷带（TR） 描述：OPTOISO 5.3KV DARL W/BASE 6SMD 隔离器 光隔离器 - 晶体管，光电输出

ONSEMI

安森美半导体

H11B3M(TA)-V

6 PIN PHOTODARLINGTON

文件：331.7 Kbytes Page：13 Pages

EVERLIGHT

台湾亿光

H11B3M(TB)-V

6 PIN PHOTODARLINGTON

文件：331.7 Kbytes Page：13 Pages

EVERLIGHT

台湾亿光

H11B3S

封装/外壳：6-SMD，鸥翼 包装：卷带（TR） 描述：OPTOISO 5.3KV DARL W/BASE 6SMD 隔离器 光隔离器 - 晶体管，光电输出

ONSEMI

安森美半导体

H11B3S(TA)-V

6 PIN PHOTODARLINGTON

文件：331.7 Kbytes Page：13 Pages

EVERLIGHT

台湾亿光

H11B3S(TB)-V

6 PIN PHOTODARLINGTON

文件：331.7 Kbytes Page：13 Pages

EVERLIGHT

台湾亿光

H11B3S1(TA)-V

6 PIN PHOTODARLINGTON

文件：331.7 Kbytes Page：13 Pages

EVERLIGHT

台湾亿光

H11B3S1(TB)-V

6 PIN PHOTODARLINGTON

文件：331.7 Kbytes Page：13 Pages

EVERLIGHT

台湾亿光

HZ11B3

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

RENESAS

瑞萨

HZU11B3

Silicon Epitaxial Planar Zener Diodes for Stabilizer

Features • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped.

RENESAS

瑞萨

H11B3产品属性

  • 类型

    描述

  • Function：

    Photo Darlington

  • Number of Channels：

    1

  • Dimension (mm)：

    7.12x6.5x3.5

  • IF [mA]：

    1

  • BVCEO (Min) (V)：

    55

  • VCE(SAT) (Max) (V)：

    1

  • CTR (%)：

    >100

  • ton (uS)：

    25

  • toff (uS)：

    18

  • Topr  (Min)(degC)：

    -55

  • Topr  (Max)(degC)：

    100

  • Viso (Vrms)：

    5000

H11B3供应商更多...

更新时间：2026-5-20 14:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华斯顿科技有限公司
H11B3
EVERLIGHT
25+23+
DIP-6
33273
绝对原装正品全新进口深圳现货
询价
深圳市高捷芯城科技有限公司
H11B33S
onsemi
25+
6-SMD
18746
样件支持,可原厂排单订货!
询价
深圳市得捷芯城科技有限公司
H11B33S
onsemi
25+
6-SMD
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
深圳市一线半导体有限公司
H11B3
24+
DIP
125
询价
深圳市科恒伟业电子有限公司
H11B3
ISOCOM英国安数光
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
询价
深圳市明嘉莱科技有限公司
H11B3
FAIRCHILD/仙童
25+
LED
880000
明嘉莱只做原装正品现货
询价
深圳市壹芯创科技有限公司
H11B3
FATRCHILD
22+
DIP-6
6196
进口原装!现货库存
询价
深圳市胜彬电子有限公司
H11B3W
FAIRCILD
22+
DIP-6
8000
原装正品支持实单
询价
深圳市能元时代电子有限公司
H11B3T
infineon
23+
34667
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
深圳市英科美电子有限公司
H11B3SD
FAIRCHILD/仙童
2223+
SOP-6
26800
只做原装正品假一赔十为客户做到零风险
询价

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H11B3规格书下载地址

H11B3参数引脚图相关

H11B3数据表相关新闻

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