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H11B1VM价格

参考价格:¥1.5786

型号:H11B1VM 品牌:Fairchild 备注:这里有H11B1VM多少钱,2026年最近7天走势,今日出价,今日竞价,H11B1VM批发/采购报价,H11B1VM行情走势销售排行榜,H11B1VM报价。
型号 功能描述 生产厂家 企业 LOGO 操作
H11B1VM

General Purpose 6-Pin Photodarlington Optocoupler

Description The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ UL, C-UL approved, Fil

FAIRCHILD

仙童半导体

6-Pin DIP Optoisolators Darlington Output(Low Input Current)

The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high output current (IC) at low LED input currents (IF). • High Sensitivity to Low Input Drive

MOTOROLA

摩托罗拉

PHOTODARLINGTON OPTOCOUPLERS

文件:140.38 Kbytes Page:7 Pages

QT

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

RENESAS

瑞萨

Silicon Epitaxial Planar Zener Diodes for Stabilizer

Features • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped.

RENESAS

瑞萨

Magnetic field sensor

DESCRIPTION The KMZ11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear displacement sensors,

PHILIPS

飞利浦

H11B1VM产品属性

  • 类型

    描述

  • 型号

    H11B1VM

  • 功能描述

    晶体管输出光电耦合器 Photodarlington

  • RoHS

  • 制造商

    Vishay Semiconductors

  • 输入类型

    DC

  • 最大集电极/发射极电压

    70 V

  • 最大集电极/发射极饱和电压

    0.4 V

  • 绝缘电压

    5300 Vrms

  • 电流传递比

    100 % to 200 %

  • 最大正向二极管电压

    1.65 V

  • 最大输入二极管电流

    60 mA

  • 最大集电极电流

    100 mA

  • 最大功率耗散

    100 mW

  • 最大工作温度

    + 110 C

  • 最小工作温度

    - 55 C

  • 封装/箱体

    DIP-4

  • 封装

    Bulk

更新时间:2026-3-18 20:00:00
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