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型号 功能描述 生产厂家 企业 LOGO 操作
H07N65

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

HSMC

华昕

H07N65

N-Channel Power Field Effect Transistor

HSMC

华昕

7A N-Channel Power MOSFET

●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Features

HUIXIN

慧芯电子

High Voltage MOSFET

HSMC

华昕

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

CET

华瑞

Super Junction MOSFET

文件:611.73 Kbytes Page:9 Pages

NCEPOWER

新洁能

Super Junction MOSFET

文件:611.73 Kbytes Page:9 Pages

NCEPOWER

新洁能

H07N65产品属性

  • 类型

    描述

  • Channel:

    N

  • VDSS(V):

    650

  • ID(A):

    7

  • VGS(V):

    ±30

  • RDS(on)Max.(ohm):

    1.2

  • RDS(on)@VGS(V):

    10

  • RDS(on)@ID(A):

    3.5

  • RoHS(Note1):

    PF

  • Status(Note2):

    M

更新时间:2026-8-5 9:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HSMC
23+
28957
原厂授权一级代理,专业海外优势订货,价格优势、品种
H
22+
TO-220FP
6000
十年配单,只做原装
H
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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