位置：首页 > IC中文资料第5585页 > CEP07N65
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP07N65 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. | CET 华瑞 |   | |
CEP07N65 | N-Channel MOSFET uses advanced trench technology 文件：1.68263 Mbytes Page：4 Pages | DOINGTER 杜因特 | | |
CEP07N65 | N Channel MOSFET | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.80142 Mbytes Page：4 Pages | DOINGTER 杜因特 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
MOSFET 650V, 7A N-CHANNEL FEATURE • RoHS Compliant • RDS(ON),typ.=1.2 Ω@VGS=10V • Low Gate Charge Minimize Switching Loss • Fast Recovery Body Diode DESCRIPTION The AM07N65 is available in TO220F Package. APPLICATION • Adaptor • Charger • SMPS Standby Power | AITSEMI 创瑞科技 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.17868 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
CEP07N65产品属性
- 类型
描述
- 型号
CEP07N65
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
TO-220 |
9000 |
只做原装，欢迎询价，量大价优 |
|||
CET |
24+ |
TO-220 |
2000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
CET |
25+ |
TO-220 |
10 |
原装正品,假一罚十! |
|||
TI |
24+ |
VQFN36 |
9480 |
公司现货库存,支持实单 |
|||
CET/華瑞 |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET/华瑞 |
TO-220 |
7305 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TOSHIBA/东芝 |
23+ |
TO-252 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
CET |
24+ |
TO-220 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
23+24 |
T0-220 |
38754 |
原装正品渠道商,提供BOM一站式配单服务 |
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CEP07N65规格书下载地址
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DdatasheetPDF页码索引
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