DESCRIPTION

DS(ON)

The FAE35SN06 uses SGT technology and design to provide excellent R with low gate charge.

It can be used in a wide variety of applications.

FEATURES

 High density cell design for ultra low RDS(ON)

 Fully characterized avalanche voltage and current

 Good stability and uniformity with high EAS

 Excellent package for good heat dissipation

 Special process technology for high ESD capability