GENERRAL DESCRIPTION

This Single N-Channel MOSFET has been designed using advanced

Power Trench process to optimize the RDS(ON).

FEATURE

High-Side Switching

Low On-Resistance

Low Threshold

Fast Switching Speed

ESD protected

APPLICATION

Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers