型号 功能描述 生产厂家 企业 LOGO 操作
GWM100-01X1-SMD

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET c

IXYS

艾赛斯

GWM100-01X1-SMD

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

Littelfuse

力特

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET c

IXYS

艾赛斯

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET c

IXYS

艾赛斯

GWM100-01X1-SMD产品属性

  • 类型

    描述

  • 型号

    GWM100-01X1-SMD

  • 功能描述

    MOSFET 100 Amps 100V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-5 10:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
22+
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9000
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模块
6980
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IXYS
23+
模块
120
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IXYS
25+
17-SMD 鸥翼
9350
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IXYS
25+
SMD-17
326
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