650V/20A Field Stop IGBT

Features ⚫ 650V 20A,VCE(sat)(typ.) = 1.8V ⚫ Field Stop IGBT Technology ⚫ 10μs Short Circuit Capability ⚫ Square RBSOA ⚫ Positive VCE (on) Temperature Coefficient. General Description LGE’s IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and oth

N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequen

30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa

N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency applications. General Features

封装/外壳：3-SMD 包装：散装 描述：CAP 520MF 5V -40-+70C 电容器 双电层电容器（EDLC），超级电容器

Wifi

封装/外壳：3-SMD 包装：散装 描述：CAP 160MF 5V -40-+70C 电容器 双电层电容器（EDLC），超级电容器

General purpose surface-mount supercapacitor

Low thermal resistance

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