Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz

Description The GTRA364002FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficency, and a thermally-enhanced package with earless flange. Features • GaN on

High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz

The GTRA364002FC is a 400-watt (PSAT) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. ·Asymmetrical Doherty design: Main P3dB 170 W Typ; Peak P3dB 230 W Typ\n·Typical Pulsed CW performance; 3400-3600 MHz; 48 V; combined outputs\n·Output power at P3dB 400 W\n·Efficiency 60%\n·Gain 14 dB\n·Capable of handling 10:1 VSWR @48 V; 50 W (WCDMA) output power\n·Low thermal resistance\n·Pb-;

Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz

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Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz

Description The GTRA364002FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficency, and a thermally-enhanced package with earless flange. Features • GaN on

Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz

Description The GTRA364002FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficency, and a thermally-enhanced package with earless flange. Features • GaN on

RAST-5-Steckverbinder, Raster 5,0 mm

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GSK 760/12

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