P-Channel Enhancement Mode Power MOSFET

Description The GT250P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The GT250P10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

isc P-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= -25A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) @VGS=10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for s

4V Drive Pch MOSFET

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4V Drive Pch MOSFET

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