TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 μs (max) • Low saturation voltage: VCE (sat) = 2.7 V (max)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

IGBT for soft switching applications

Feature：Low saturation voltage\nNumber of Circuits：1\nBuilt-in Diodes：No\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Collector Current IC 20 A \nBreakdown Voltage VCES 600 V ;

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

High Power Switching Applications Fast Switching Applications

High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 μs (typ.) Low switching loss : Eon = 0.40 mJ (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Discrete IGBTs Silicon N-Channel IGBT

Features (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 20 A) (3) FRD included between emitter and collector Applications • Motor Drivers

Silicon N Channel IGBT High Power Switching Applications

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Silicon N Channel IGBT High Power Switching Applications

文件：191.19 Kbytes Page：6 Pages

丝印代码：20J121；Discrete IGBTs Silicon N-Channel IGBT

文件：195.47 Kbytes Page：7 Pages

SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

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SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

文件：491.29 Kbytes Page：7 Pages

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications

Silicon N Channel IGBT High Power Switching Applications

文件：197.12 Kbytes Page：7 Pages

Silicon N Channel IGBT High Power Switching Applications

文件：197.12 Kbytes Page：7 Pages

封装/外壳：TO-220-3 整包 包装：管件 描述：DISCRETE IGBT TRANSISTOR TO-220S 分立半导体产品 晶体管 - UGBT、MOSFET - 单