| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MOSFET650V,4AN-CHANNEL FEATURE •RDS(ON),typ.=2.1Ω@VGS=10V •HighCurrentRating •LowerCapacitance •LowerTotalGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM04N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.97664 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MA/COM |
20+ |
LGA10 |
970 |
进口原装现货,假一赔十 |
|||
M/A-COM |
22+ |
LGA10 |
8200 |
全新原装现货!自家库存! |
|||
M/A-COM |
22+ |
LGA10 |
8000 |
原装正品支持实单 |
|||
M/A-COM |
23+ |
LGA10 |
50000 |
全新原装正品现货,支持订货 |
|||
MA/COM |
25+ |
LGA10 |
970 |
原装正品,欢迎来电咨询! |
|||
PTC |
24+ |
TSSOP24 |
13718 |
只做原装 公司现货库存 |
|||
MA/COM |
23+ |
LGA10 |
7300 |
专注配单,只做原装进口现货 |
|||
M/A-COM |
LGA10 |
125000 |
一级代理原装正品,价格优势,长期供应! |
||||
ACC |
23+ |
SMD |
25000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
AM |
23+ |
SMD |
12800 |
公司只有原装 欢迎来电咨询。 |
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DdatasheetPDF页码索引
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