GT04价格

参考价格:¥18.1913

型号:GT04-111-063-B 品牌:ICEComponents 备注:这里有GT04多少钱,2025年最近7天走势,今日出价,今日竞价,GT04批发/采购报价,GT04行情走势销售排行榜,GT04报价。
型号 功能描述 生产厂家&企业 LOGO 操作
GT04

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

GT04

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

N-Channel Enhancement Mode Power MOSFET

Description The GT040N04MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT040N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT040N04TI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT040N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT040N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The GT042P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The GT042P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT045N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT045N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT045N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT045N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT045N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT048N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT048N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

CRI 75 White LED

Introduction B05 series is a high power, multi-chip device with very low thermal resistance as a result of the PCB substrate. The series is a surface-mount high-power device featuring high brightness that is suitable for all kinds of lighting applications such as general illumination, spot, signa

Everlight

台湾亿光

CRI 75 White LED

Introduction B05 series is a high power, multi-chip device with very low thermal resistance as a result of the PCB substrate. The series is a surface-mount high-power device featuring high brightness that is suitable for all kinds of lighting applications such as general illumination, spot, signa

Everlight

台湾亿光

CRI 75 White LED

Introduction B05 series is a high power, multi-chip device with very low thermal resistance as a result of the PCB substrate. The series is a surface-mount high-power device featuring high brightness that is suitable for all kinds of lighting applications such as general illumination, spot, signa

Everlight

台湾亿光

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:206.27 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

Gate Drive Transformer

文件:156.7 Kbytes Page:2 Pages

ICE

GT04产品属性

  • 类型

    描述

  • 型号

    GT04

  • 制造商

    ICE

  • 制造商全称

    ice Components, Ins.

  • 功能描述

    Gate Drive Transformer

更新时间:2025-8-9 17:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
N/A
04+
SMD
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
24+
QFP
30
FAIRCHILD
2025+
SOP14
4825
全新原厂原装产品、公司现货销售
FAIRCHILD
2023+
SOP14
50000
全新原装现货
GOFORD
10
GOFORD(谷峰)
2447
TO-220
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
GOFORD
24+
con
10
现货常备产品原装可到京北通宇商城查价格
Fairchild
2022
SOIC-14
3160
绝对实际库存
NK/南科功率
2025+
TO-263-2
986966
国产
G-Switch/品赞
25+
DIP
2500
国产替换现货降本

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