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GT04价格

参考价格：￥18.1913

型号：GT04-111-063-B 品牌：ICEComponents 备注：这里有GT04多少钱，2026年最近7天走势，今日出价，今日竞价，GT04批发/采购报价，GT04行情走势销售排行榜，GT04报价。

型号	功能描述	生产厂家企业	LOGO
GT04	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04	GT04一按键开关—2.5mm行程	Unionwell	Unionwell
GT040N04MA	丝印代码：GT040N04；N-Channel Enhancement Mode Power MOSFET Description The GT040N04MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT040N04T	丝印代码：GT040N04；N-Channel Enhancement Mode Power MOSFET Description The GT040N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT040N04TI	丝印代码：GT040N04I；N-Channel Enhancement Mode Power MOSFET Description The GT040N04TI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT040N10M	丝印代码：GT040N10；N-Channel Enhancement Mode Power MOSFET Description The GT040N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT040N10T	丝印代码：GT040N10；N-Channel Enhancement Mode Power MOSFET Description The GT040N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT042P06M	丝印代码：GT042P06；P-Channel Enhancement Mode Power MOSFET Description The GT042P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT042P06T	丝印代码：GT042P06；P-Channel Enhancement Mode Power MOSFET Description The GT042P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT045N10D5	丝印代码：GT045N10；N-Channel Enhancement Mode Power MOSFET Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT045N10D5A	丝印代码：GT045N10；N-Channel Enhancement Mode Power MOSFET Description The GT045N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT045N10M	丝印代码：GT045N10；N-Channel Enhancement Mode Power MOSFET Description The GT045N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT045N10MA	丝印代码：GT045N10；N-Channel Enhancement Mode Power MOSFET Description The GT045N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT045N10Q	丝印代码：GT045N10；N-Channel Enhancement Mode Power MOSFET Description The GT045N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT045N10T	丝印代码：GT045N10；N-Channel Enhancement Mode Power MOSFET Description The GT045N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT048N10T	丝印代码：GT048N10；N-Channel Enhancement Mode Power MOSFET Description The GT048N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT048N10TA	丝印代码：GT048N10；N-Channel Enhancement Mode Power MOSFET Description The GT048N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT040N04M	40V N Channel SGT MOSFET Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro	GOFORD 谷峰半导体	GOFORD
GT04H-P05-50K-R11-TR	CRI 75 White LED Introduction B05 series is a high power, multi-chip device with very low thermal resistance as a result of the PCB substrate. The series is a surface-mount high-power device featuring high brightness that is suitable for all kinds of lighting applications such as general illumination, spot, signa	EVERLIGHT 台湾亿光	EVERLIGHT
GT04H-P05-57K-R11-TR	CRI 75 White LED Introduction B05 series is a high power, multi-chip device with very low thermal resistance as a result of the PCB substrate. The series is a surface-mount high-power device featuring high brightness that is suitable for all kinds of lighting applications such as general illumination, spot, signa	EVERLIGHT 台湾亿光	EVERLIGHT
GT04H-P05-65K-R11-TR	CRI 75 White LED Introduction B05 series is a high power, multi-chip device with very low thermal resistance as a result of the PCB substrate. The series is a surface-mount high-power device featuring high brightness that is suitable for all kinds of lighting applications such as general illumination, spot, signa	EVERLIGHT 台湾亿光	EVERLIGHT
GT04_08	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT040N04T	Trench Mosfet	GOFORD 谷峰半导体	GOFORD
GT04-111-063	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-063-_	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-063-_E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-063-_E	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-063-E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-063-X	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-126	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-126-_	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-126-_E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-126-_E	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-126-E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-126-X	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-189	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-189-_	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-189-_E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-189-_E	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-189-E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-189-X	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-252	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-252-_	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-252-_E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-252-_E	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-252-E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-252-X	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-315	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-315-_	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-315-_E	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-315-_E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-315-E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-315-X	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-378	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-378-_	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-378-_E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-378-_E	Gate Drive Transformer 文件：156.7 Kbytes Page：2 Pages	ICE	ICE
GT04-111-378-E	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE
GT04-111-378-X	Gate Drive Transformer 文件：206.27 Kbytes Page：2 Pages	ICE	ICE

GT04产品属性

类型
描述
Configuration：
N channel
ESD：
NO
VDS(min)：
40V
Id at 25℃(max)：
110A
PD(max)：
160W
Vgs(th)typ(V)：
1.5V
RDS(on)(typ)(@10V)：
2.7mΩ
RDS(on)(typ)(@4.5V)：
4mΩ
Qg(nC)：
50
Ciss：
2298
Crss：
413

GT04供应商更多...

更新时间：2026-5-23 15:04:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	GT0400EM	FAIRCHILD	2023+	SOP14	50000	全新原装现货	询价
天津市博通航睿技术有限公司	GT045N10D5	GOFORD			10		询价
艾睿（深圳）半导体有限公司	GT045N10T	GOFORD(谷峰)	2447	TO-220	105000	50个/管一级代理专营品牌!原装正品,优势现货,长期	询价
北京京北通宇电子元件有限公司	GT045N10M	GOFORD	24+	con	10	现货常备产品原装可到京北通宇商城查价格	询价
深圳市宏世佳电子科技有限公司	GT0400EM	FAIRCHILD	2025+	SOP14	4825	全新原厂原装产品、公司现货销售	询价
现代芯城（深圳）科技有限公司	GT045N10M		26+	N/A	78000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市晨豪科技有限公司	GT045N10T	GOFORD/谷峰	22+23+	TO-220	85192	新到货全新原装诚信经营	询价

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找IC，尽在114IC

GT04价格

GT04产品属性

GT04供应商更多...

GT04芯片相关品牌

GT04规格书下载地址

GT04参数引脚图相关

GT04数据表相关新闻

GT17HN-4DP-2DS(C)

GT24C1024-2GLI

GT50GR22

GST5009MLF

GSP-812

GSOT36C-GS08vishayESDSuppressorTVS±30KV原装正品大量现货

DdatasheetPDF页码索引