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位置：首页 > IC中文资料 > GT02

GT02价格

参考价格：￥9.0956

型号：GT02-110-019 品牌：ICEComponents 备注：这里有GT02多少钱，2026年最近7天走势，今日出价，今日竞价，GT02批发/采购报价，GT02行情走势销售排行榜，GT02报价。
型号 功能描述 生产厂家 企业 LOGO 操作
TMXGT02

丝印代码：GT02；SAW Bandpass Filters | Wireless Communications

Features  868.6 MHz center frequency  Ceramic package for Surface Mounted Technology  Low Loss: 2.6 dB typical value within PassBand Width 868 to 870 MHz  Good rejections specially for the LTE band and the UMTS band  Maximum pulse power: 27 dBm Applications  Remote control - RF  W

RAKON

锐康

GT02

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02

GT02一按键开关—4mm行程

Unionwell

GT020N04D5A

丝印代码：GT020N04A；N-Channel Enhancement Mode Power MOSFET

Description The GT020N04D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT020N10TL

丝印代码：GT020N10；N-Channel Enhancement Mode Power MOSFET

Description The GT020N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT020N10TLA

丝印代码：GT020N10；N-Channel Enhancement Mode Power MOSFET

Description The GT020N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10M

丝印代码：GT023N10；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10Q

丝印代码：GT023N10；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10T

丝印代码：GT023N10；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10TA

丝印代码：GT023N10；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10TL

丝印代码：GT023N10；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10TLA

丝印代码：GT023N10；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT025N06AD5

丝印代码：GT025N06；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AD5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT025N06AM

丝印代码：GT025N06；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AM uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

GOFORD

谷峰半导体

GT025N06AM6

丝印代码：GT025N06；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AM6 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT025N06AMA

丝印代码：GT025N06；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AMA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters l Synchronous Rectification

GOFORD

谷峰半导体

GT025N06AQ

丝印代码：GT025N06；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AQ uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

GOFORD

谷峰半导体

GT025N06AT

丝印代码：GT025N06；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

GOFORD

谷峰半导体

GT020N04D5

40V N Channel SGT MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

GT023N10TA

N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10TL

N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10TLA

N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10TLA

N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10TLA

N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10TLA

N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10TLA

N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10TLA

N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT023N10TLA

N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

GT02_08

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT0200-17M000

包装：散装 描述：HYBRID 17 STEP MOTOR LOW BACKLAS 电机，电磁阀，螺线管，驱动器板/模块 步进电机

NMB

美蓓亚三美

GT0200-23M201

包装：散装 描述：HYBRID 23 STEP MOTOR LOW BACKLAS 电机，电磁阀，螺线管，驱动器板/模块 步进电机

NMB

美蓓亚三美

GT020N04M

40V N Channel SGT MOSFET

GOFORD

谷峰半导体

GT02-110-006

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-110-006

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-110-006

Gate Drive Transformer

文件：203.77 Kbytes Page：1 Pages

ICE

GT02-110-010

Gate Drive Transformer

文件：203.77 Kbytes Page：1 Pages

ICE

GT02-110-010

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-110-010

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-110-019

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-110-019

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-110-019

Gate Drive Transformer

文件：203.77 Kbytes Page：1 Pages

ICE

GT02-111-006

Gate Drive Transformer

文件：203.77 Kbytes Page：1 Pages

ICE

GT02-111-006

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-111-006

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-120-006

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-120-006

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-120-006

Gate Drive Transformer

文件：203.77 Kbytes Page：1 Pages

ICE

GT02-120-014

Gate Drive Transformer

文件：203.77 Kbytes Page：1 Pages

ICE

GT02-120-014

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-120-014

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-122-006

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-122-006

Gate Drive Transformer

文件：203.77 Kbytes Page：1 Pages

ICE

GT02-122-006

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-122-008

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02-122-008

Gate Drive Transformer

文件：203.77 Kbytes Page：1 Pages

ICE

GT02-122-008

Gate Drive Transformer

文件：176.03 Kbytes Page：1 Pages

ICE

GT02产品属性

  • 类型

    描述

  • Package：

    TO-263

  • Type：

    N

  • ESD Diode：

    NO

  • Vds(V)：

    40

  • Vgs(V)：

    ±20

  • Id(A)：

    140

  • Pd(W)：

    85

  • Vgs(th)max(V)：

    2.4

  • Rds(on)mΩ(typ)@Vgs=10V：

    1.9

  • Rds(on)mΩ(typ)@Vgs=4.5V：

    2.5

  • Rds(on)mΩ(max)@Vgs=10V：

    2.4

  • Rds(on)mΩ(max)@Vgs=4.5V：

    3

  • Qg(nC)：

    57

  • Qgs(nC)：

    9

  • Qgd(nC)：

    15

  • Ciss(pF)：

    3235

  • Crss(pF)：

    46

  • Technology：

    SGT

GT02供应商更多...

更新时间：2026-5-22 8:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市乐峰达科技有限公司
TMXGT02
Rakon 锐康
25+
N/A
10000
全新原装正品、可开增票、可溯源、一站式配单
询价

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