Dual In-Series Small-Signal High-Voltage Switching Diode

FEATURES • Silicon epitaxial planar diode • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material

Dual In-Series Small Signal High Voltage Switching Diode

FEATURES • Silicon epitaxial planar diode • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Mater

Dual In-Series Small Signal High Voltage Switching Diode

Silicon epitaxial planar diode\nFast switching dual in-series diode, especially suited for applications requiring high voltage capability\nAEC-Q101 qualified available;

Dual In-Series Small Signal High Voltage Switching Diode

文件：92.53 Kbytes Page：4 Pages

Dual In-Series Small Signal High Voltage Switching Diode

FEATURES • Silicon epitaxial planar diode • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Mater

Dual In-Series Small Signal High Voltage Switching Diode

FEATURES • Silicon epitaxial planar diode • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified available (part number on request) • Base P/N-G3 - green, commercial grade • Material categorization: for definition

Silicon epitaxial planar diode

FEATURES • Silicon epitaxial planar diode • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Material categorization: For definitions of compliance please see www.vishay.com

Dual In-Series Small Signal High Voltage Switching Diode

Silicon epitaxial planar diode\nFast switching dual in-series diode, especially suited for applications requiring high voltage capability\nAEC-Q101 qualified available (part number on request);

Dual In-Series Small Signal High Voltage Switching Diode

FEATURES • Silicon epitaxial planar diode • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified available (part number on request) • Base P/N-G3 - green, commercial grade • Material categorization: for definition

Dual In-Series Small-Signal High-Voltage Switching Diode

Features • Silicon Epitaxial Planar Diode • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Dual In-Series Small-Signal High-Voltage Switching Diode

Features • Silicon Epitaxial Planar Diode • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Dual In-Series Small-Signal High-Voltage Switching Diode

Features • Silicon Epitaxial Planar Diode • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Dual In-Series Small Signal High Voltage Switching Diode

文件：92.53 Kbytes Page：4 Pages

Dual In-Series Small Signal High Voltage Switching Diode

文件：92.53 Kbytes Page：4 Pages

Dual In-Series Small Signal High Voltage Switching Diode

文件：92.53 Kbytes Page：4 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY GP 240V 225MA SOT23 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：DIODE ARRAY GP 240V 225MA SOT23 分立半导体产品 二极管 - 整流器 - 阵列

Dual In-Series Small Signal High Voltage Switching Diode

文件：92.53 Kbytes Page：4 Pages

Dual In-Series Small Signal High Voltage Switching Diode

文件：92.53 Kbytes Page：4 Pages

二极管 - 通用，功率，开关 300 Volt 225mA 50ns Dual Series

Dual In-Series Small-Signal High-Voltage Switching Diode

文件：77.28 Kbytes Page：4 Pages

P500-G and P850-G Series Dual TBU짰 High-Speed Protectors

文件：793.78 Kbytes Page：7 Pages

Dual In-Series Small-Signal High-Voltage Switching Diode

文件：77.28 Kbytes Page：4 Pages

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 2600 V Mean forward current 3180 A Surge current 33.6 kA

Quad GTL/GTL to LVTTL/TTL bidirectional latched translator

DESCRIPTION The GTL2004 is a quad translating transceiver designed for 3.3V system interface with a GTL/GTL+ bus. The direction pin allows the part to function as either a GTL to TTL sampling receiver or as a TTL to GTL interface. Separate latch enables allow sampling and holding of data from th

Quad GTL/GTL to LVTTL/TTL bidirectional latched translator

DESCRIPTION The GTL2004 is a quad translating transceiver designed for 3.3V system interface with a GTL/GTL+ bus. The direction pin allows the part to function as either a GTL to TTL sampling receiver or as a TTL to GTL interface. Separate latch enables allow sampling and holding of data from th

256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2004 and MPC2005 are designed to provide burstable, high performance 256KB/512KB L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. The modules are configured

900 MHz DRIVER & RAMP SILICON MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2004 is an integrated Driver and Ramp designed for transmitters operating in the 800 MHz to 1.0 GHz frequency range. The Ramp is an integrator which can be used for burst control for TDD/TDMA systems. The Driver uses a cascode configuration for high gain and reverse isolation. A power dow