POWER MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 6.2A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 52mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 6.2A, RDS(ON) = 38mW @VGS = 10V. RDS(ON) = 52mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 6.2 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

CABLE MICRO COAXIAL 36AWG 10

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MACHINE SCREW PAN PHILLIPS 10-32

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