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GSB670

电缆套管

ABB

ABB集团

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1315 A Surge current 15 kA

POSEICO

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp

SIEMENS

西门子

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp

SIEMENS

西门子

DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION

Description The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as l

STMICROELECTRONICS

意法半导体

GSB670产品属性

  • 类型

    描述

  • 可扩展:

  • 编织层:

  • 套管长度:

    11.2mm

  • 材料:

    铜合金

  • 颜色:

  • 套管直径:

    19mm

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