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GS706SD

The GS706SD is designed for general purpose detection and high speed switching.

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ETL

亚历电子

GS706SD

SURFACE MOUNT SCHOTTKY BARRIER DIODE

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GTM

勤益投资控股

GS706SD

SURFACE MOUNT SCHOTTKY BARRIER DIODE

GTM

勤益投资控股

GS706SD

The GS706SD is designed for general purpose detection and high speed switching.

ETL

亚历电子

High Voltage Input Amplifier Circuit for Hi-Fi Power Amplifier

■ Overview The AN7062N is a high voltage integrated circuit designed for pre-driver of 60W-class Hi-Fi audio amp. Stereo operation is enabled due to two amplifiers built-in. ■ Features • High voltage • Low noise : Vni = 2.5µV (typ.) • Low distortion : THD = 0.003 (typ.) • Good channel separa

PANASONIC

松下

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 800 V Mean on-state current 4305 A Surge current 70 kA

POSEICO

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

MOTOROLA

摩托罗拉

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

POLYFET

GS706SD产品属性

  • 类型

    描述

  • 型号

    GS706SD

  • 制造商

    GTM

  • 制造商全称

    GTM

  • 功能描述

    SURFACE MOUNT SCHOTTKY BARRIER DIODE

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