Failsafe Devices

GRF6011 is linear, ultra-low loss SPDT switch that has been designed with failsafe characteristics when all voltage inputs are removed. In switching mode, the device delivers IP1dB levels greater than 1 Watt along with >49 dBm IIP3 levels for both RF paths.(1)When powered down (Failsafe Mode), RFC t Path: RFC to RF1: (1.9 GHz); Vdd: 3.3V\n• Insertion Loss: 0.43 dB\n• IP1dB: 32.0 dBm\n• IIP3: 49.5 dBm\n• Failsafe Mode: High loss;

SPDT Failsafe Switch 0.1 ??6.0 GHz

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Switches

Path: RFC to RF1: (1.9 GHz); Vdd: 3.3V\n• Insertion Loss: 0.43 dB\n• IP1dB: 32.0 dBm\n• IIP3: 49.5 dBm\n• Failsafe Mode: High loss\nPath: RFC to RF2: (1.9 GHz); Vdd: 3.3V\n• Insertion Loss: 0.33 dB\n• IP1dB: 30.5 dBm\n• IIP3: 51.0 dBm\n• Failsafe Mode: 0.4 dB loss\nAEC-Q100 Grade 2 Qual Pending\n• 1;

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-264 P

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

Fast Recovery Rectifier, 40A, 200ns

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High-speed Data Converter

High-speed Data Converter

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free