High Gain, Low Current LNATuning Range: 0.1 to 4.2 GHz

High Gain, Low Current LNA\n\nTuning Range: 0.1 to 4.2 GHz\n\n\n\nGRF2106W is a low cost, high gain LNA designed for a wide range of applications up to 4.2 GHz.\n\nThe device is operated from a supply voltage (Vdd) range of 2.7 to 5.0 V with Iddq set from 10 mA to 30 mA for optimal efficiency and li Reference: 3.3V/15mA/2.45GHz\n• EVB NF: 0.8 dB\n• Gain: 21.5 dB\n• OP1dB: 11.0 dBm\n• OIP3: 21.0 dBm\n• Flexible Bias Voltage and Current\n• Minimal External Components\n• Process: GaAs pHEMT\n• Tested to AEC-Q100 Grade 2 (Pending);

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda