Ultra-Low Noise Amplifier Tuning Range: 0.7 to 2.7 GHz

GRF2071-W is a linear, ultra-low noise amplifier designed for automotive satellite radio multi-stage LNAs, signal booster and GPS applications.(1)With its ultra-low noise and high gain characteristics, this amplifier is an ideal first-stage LNA solution for high-performance, multi-stage SDARS LNA de Reference Condition: 5V/60mA/2332.5MHz\n• Gain: 19.0 dB\n• Eval Board NF: 0.36 dB\n• OP1dB: 21.0 dBm\n• OIP3: 36.0 dBm\n• Flexible Bias Voltage and Current\n• Process: GaAs pHEMT\n• AEC-Q100 Grade 2 Qual Pending\n• 100% Device Reflow at Assembly\n• 100% Optical Die Inspection;

Infrastructure LNAs

The GRF2072 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring ultra-low NF, high gain and linearity.(1)Configured as a first stage LNA, linear driver or cascaded gain block, it offers high levels of Reference: 5V/70 mA at 2.5 GHz\n• Gain: 19.3 dB\n• Eval Board NF: 0.50 dB\n• OP1dB: 19.7 dBm\n• OIP3: 37.5 dBm\n• Flexible Bias Voltage and Current\n• Process: GaAs pHEMT;

Infrastructure LNAs

The GRF2073 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring ultra-low NF, high gain and linearity.(1)Configured as a first stage LNA, linear driver or cascaded gain block, GRF2073 offers high leve Reference: 5V/70 mA at 3.6 GHz\n• Gain: 18.9 dB\n• Eval Board NF: 0.69 dB\n• OP1dB: 18.4 dBm\n• OIP3: 36.6 dBm\n• Flexible Bias Voltage and Current\n• Process: GaAs pHEMT;

Ultra-Low Noise Amplifier 2 to 6 GHz

FEATURES Excellent NF Performance High Gain Outstanding Linearity Flexible Bias Voltage and Current Drop-in Compatibility with Legacy SDARS LNA Solutions Compact 2.0 x 2.0 mm DFN-8 Package Process: GaAs pHEMT AEC-Q100 Grade 2 Qual Reference: 5 V / 2.3325 GHz / 70 mA Gain: 20.5 dB OIP3:

Ultra-Low Noise Amplifier 1 to 6 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Compact 2.0 x 2.0 mm DFN-8 Package Reference: 5 V / 2332.5 MHz / 60 mA Gain: 20.5 dB OIP3: 35.5 dBm OP1dB: 17.5 dBm Evaluation Board Noise Figure: 0.35 dB Tested to AEC-Q100 Grade 2 100 Device Reflow at Assembly 100 Optical

GRF2072 Guerrilla RF品牌长期供应 技术支持

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Ultra-Low Noise Amplifier Tuning Range: 0.1 to 1.5 GHz

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Ultra-Low Noise Amplifier Tuning Range: 0.7 ??2.7 GHz

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Ultra-Low Noise Amplifier Tuning Range: 0.7 to 2.7 GHz

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Ultra-Low Noise Amplifier Tuning Range: 1.5 ??3.8 GHz

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Ultra-Low Noise Amplifier Tuning Range: 2.0 to 6.0 GHz

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Ultra-Low Noise Amplifier Tuning Range: 2.0 to 6.0 GHz

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Ultra-Low Noise Amplifier Tuning Range: 1.0 to 6.0 GHz

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Failsafe Bypass LNA Tuning Range: 0.7 ??3.8 GHz

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SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V

Operational Amplifiers

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Operational Amplifiers

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Darlington Phototransistor

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