High Linearity Gain Blocks

The GRF2013 is a broadband gain block with low noise figure and industry leading linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF, linearity and return losses over 500 to 2700 MHz with a single match.(1)Configure • 0.7 GHz to 3.8 GHz (Single Match)\n• Gain: 18.5 dB @ 1.9 GHz\n• OIP3: 38.5 dBm @ 1.9 GHz\n• OP1dB: 22.5 dBm @ 1.9 GHz\n• NF: 1.3 dB @ 1.9 GHz\n• Operation to +105C Ambient\n• Flexible Bias Voltage and Current\n• Internally Matched to 50Ω\n• Process: GaAs pHEMT;

Broadband Linear Gain Block 0.05 to 8.0 GHz

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Broadband Linear Gain Block 0.05 to 8.0 GHz

Features Reference: 5V/90mA/1.9 GHz • Gain: 18.5 dB • OIP3: 38.5 dBm • OP1dB: 22.5 dBm • NF: 1.3 dB • Tested to AEC-Q100 Grade 2 • Flexible Biasing • Internally Matched to 50Ω • Process: GaAs pHEMT • Applications • Compensators • Small Cells and Cellular Repeaters • 802.11ac

Broadband Linear Gain Block

GRF2013-W is a broadband gain block with low noise figure and high linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF, linearity and re-turn losses over 0.7 to 3.8 GHz with a single match.(1)Optimizing the bias ind Reference: 5V/90mA/1.9GHz\n• Gain: 18.5 dB\n• OIP3: 38.5 dBm\n• OP1dB: 22.5 dBm\n• NF: 1.3 dB\nReference: 8V/100mA/1.9 GHz\n• Gain: 18.5 dB\n• OIP3: 41.0 dBm\n• OP1dB: 25.3 dBm\n• NF: 1.4 dB\n• AEC-Q100 Grade 2 Qualification Pending\n• Internally Matched to 50Ω\n• Low Noise Figure\n• Flat Gain\n• Fl;

Broadband Linear Gain Block 0.05 to 8.0 GHz

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GSM 4 W power amplifier

GENERAL DESCRIPTION The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. The PA requires only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. It can be

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

Adaptive allocation and scaling for PASC coding in DCC systems

GENERAL DESCRIPTION The SAA2013 performs the adaptive allocation and scaling function in the Precision Adaptive Sub-band Coding (PASC) system. It is not required in playback only applications, and is only used during recording. To complete the PASC processor, a SAA2003 stereo filter and codec is

Adaptive allocation and scaling for PASC coding in DCC systems

GENERAL DESCRIPTION The SAA2013 performs the adaptive allocation and scaling function in the Precision Adaptive Sub-band Coding (PASC) system. It is not required in playback only applications, and is only used during recording. To complete the PASC processor, a SAA2003 stereo filter and codec is