Powerline N-Channel Single Switch IGBT Module Preliminary Information

The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate

Hi-Reliability Single Switch IGBT Module

The powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP2400ESM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide revers

Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP2401ESM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT

Powerline N-Channel Single Switch IGBT Module Preliminary Information

Hi-Reliability Single Switch IGBT Module

Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

AM/FM Transistor

AM/FM Transistor NPN Silicon

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

Silicon planar type

文件：41.87 Kbytes Page：2 Pages

Silicon planar type

文件：41.48 Kbytes Page：2 Pages

RF POWER TRANSISTORS NPN SILICON

文件：129.9 Kbytes Page：6 Pages